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Corrigendum: High-performance n-type black phosphorus transistors with type control via thickness and contact-metal engineering

Detalles Bibliográficos
Autores principales:	Perello, David J., Chae, Sang Hoon, Song, Seunghyun, Lee, Young Hee
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Corrigenda
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4738328/ https://www.ncbi.nlm.nih.gov/pubmed/26818132 http://dx.doi.org/10.1038/ncomms10428

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