New Flexible Channels for Room Temperature Tunneling Field Effect Transistors

Tunneling field effect transistors (TFETs) have been proposed to overcome the fundamental issues of Si based transistors, such as short channel effect, finite leakage current, and high contact resistance. Unfortunately, most if not all TFETs are operational only at cryogenic temperatures. Here we re...

Descripción completa

Detalles Bibliográficos
Autores principales: Hao, Boyi, Asthana, Anjana, Hazaveh, Paniz Khanmohammadi, Bergstrom, Paul L., Banyai, Douglas, Savaikar, Madhusudan A., Jaszczak, John A., Yap, Yoke Khin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4742867/
https://www.ncbi.nlm.nih.gov/pubmed/26846587
http://dx.doi.org/10.1038/srep20293

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4742867/
https://www.ncbi.nlm.nih.gov/pubmed/26846587
http://dx.doi.org/10.1038/srep20293

Ejemplares similares