Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers

We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer lay...

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Detalles Bibliográficos
Autores principales: Zhao, Guijuan, Wang, Lianshan, Yang, Shaoyan, Li, Huijie, Wei, Hongyuan, Han, Dongyue, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748300/
https://www.ncbi.nlm.nih.gov/pubmed/26861595
http://dx.doi.org/10.1038/srep20787

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748300/
https://www.ncbi.nlm.nih.gov/pubmed/26861595
http://dx.doi.org/10.1038/srep20787

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