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Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers
We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer lay...
Autores principales: | Zhao, Guijuan, Wang, Lianshan, Yang, Shaoyan, Li, Huijie, Wei, Hongyuan, Han, Dongyue, Wang, Zhanguo |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748300/ https://www.ncbi.nlm.nih.gov/pubmed/26861595 http://dx.doi.org/10.1038/srep20787 |
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