Positron annihilation spectroscopy of vacancy-related defects in CdTe:Cl and CdZnTe:Ge at different stoichiometry deviations

Positron annihilation spectroscopy (PAS) was used to examine the effect of defined Cd-rich and Te-rich annealing on point defects in Cl-doped CdTe and Ge-doped CdZnTe semi-insulating single crystals. The as-grown crystals contain open-volume defects connected with Cd vacancies [Image: see text]. It...

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Detalles Bibliográficos
Autores principales: Šedivý, L., Čížek, J., Belas, E., Grill, R., Melikhova, O.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748320/
https://www.ncbi.nlm.nih.gov/pubmed/26860684
http://dx.doi.org/10.1038/srep20641

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4748320/
https://www.ncbi.nlm.nih.gov/pubmed/26860684
http://dx.doi.org/10.1038/srep20641

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