Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and...

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Detalles Bibliográficos
Autores principales: Geum, Dae-Myeong, Park, Min-Su, Lim, Ju Young, Yang, Hyun-Duk, Song, Jin Dong, Kim, Chang Zoo, Yoon, Euijoon, Kim, SangHyeon, Choi, Won Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4750074/
https://www.ncbi.nlm.nih.gov/pubmed/26864968
http://dx.doi.org/10.1038/srep20610

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4750074/
https://www.ncbi.nlm.nih.gov/pubmed/26864968
http://dx.doi.org/10.1038/srep20610

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