Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

We realize a device with biological synaptic behaviors by integrating silicon oxide (SiO(x)) resistive switching memory with Si diodes. Minimal synaptic power consumption due to sneak-path current is achieved and the capability for spike-induced synaptic behaviors is demonstrated, representing criti...

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Detalles Bibliográficos
Autores principales: Chang, Yao-Feng, Fowler, Burt, Chen, Ying-Chen, Zhou, Fei, Pan, Chih-Hung, Chang, Ting-Chang, Lee, Jack C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754682/
https://www.ncbi.nlm.nih.gov/pubmed/26880381
http://dx.doi.org/10.1038/srep21268

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754682/
https://www.ncbi.nlm.nih.gov/pubmed/26880381
http://dx.doi.org/10.1038/srep21268

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