Contact gating at GHz frequency in graphene

The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device pe...

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Detalles Bibliográficos
Autores principales: Wilmart, Q., Inhofer, A., Boukhicha, M., Yang, W., Rosticher, M., Morfin, P., Garroum, N., Fève, G., Berroir, J.-M., Plaçais, B.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754686/
https://www.ncbi.nlm.nih.gov/pubmed/26879709
http://dx.doi.org/10.1038/srep21085

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754686/
https://www.ncbi.nlm.nih.gov/pubmed/26879709
http://dx.doi.org/10.1038/srep21085

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