Cargando…
Contact gating at GHz frequency in graphene
The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device pe...
| Autores principales: | , , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754686/ https://www.ncbi.nlm.nih.gov/pubmed/26879709 http://dx.doi.org/10.1038/srep21085 |