Interface Structure of MoO(3) on Organic Semiconductors

We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO(3) on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are...

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Detalles Bibliográficos
Autores principales: White, Robin T., Thibau, Emmanuel S., Lu, Zheng-Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754744/
https://www.ncbi.nlm.nih.gov/pubmed/26880185
http://dx.doi.org/10.1038/srep21109

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754744/
https://www.ncbi.nlm.nih.gov/pubmed/26880185
http://dx.doi.org/10.1038/srep21109

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