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Interface Structure of MoO(3) on Organic Semiconductors
We have systematically studied interface structure formed by vapor-phase deposition of typical transition metal oxide MoO(3) on organic semiconductors. Eight organic hole transport materials have been used in this study. Ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy are...
Autores principales: | White, Robin T., Thibau, Emmanuel S., Lu, Zheng-Hong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4754744/ https://www.ncbi.nlm.nih.gov/pubmed/26880185 http://dx.doi.org/10.1038/srep21109 |
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