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Strong hole-doping and robust resistance-decrease in proton-irradiated graphene
Great effort has been devoted in recent years to improve the electrical conductivity of graphene for use in practical applications. Here, we demonstrate the hole carrier density of CVD graphene on a SiO(2)/Si substrate increases by more than one order of magnitude to n = 3 × 10(13) cm(−2) after irra...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4758087/ https://www.ncbi.nlm.nih.gov/pubmed/26888197 http://dx.doi.org/10.1038/srep21311 |