Spatially resolved TiO(x) phases in switched RRAM devices using soft X-ray spectromicroscopy

Reduction in metal-oxide thin films has been suggested as the key mechanism responsible for forming conductive phases within solid-state memory devices, enabling their resistive switching capacity. The quantitative spatial identification of such conductive regions is a daunting task, particularly fo...

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Detalles Bibliográficos
Autores principales: Carta, D., Hitchcock, A. P., Guttmann, P., Regoutz, A., Khiat, A., Serb, A., Gupta, I., Prodromakis, T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4759601/
https://www.ncbi.nlm.nih.gov/pubmed/26891776
http://dx.doi.org/10.1038/srep21525

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4759601/
https://www.ncbi.nlm.nih.gov/pubmed/26891776
http://dx.doi.org/10.1038/srep21525

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