Graphene growth on Ge(100)/Si(100) substrates by CVD method

The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining gr...

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Detalles Bibliográficos
Autores principales: Pasternak, Iwona, Wesolowski, Marek, Jozwik, Iwona, Lukosius, Mindaugas, Lupina, Grzegorz, Dabrowski, Pawel, Baranowski, Jacek M., Strupinski, Wlodek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4761869/
https://www.ncbi.nlm.nih.gov/pubmed/26899732
http://dx.doi.org/10.1038/srep21773

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4761869/
https://www.ncbi.nlm.nih.gov/pubmed/26899732
http://dx.doi.org/10.1038/srep21773

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