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Graphene growth on Ge(100)/Si(100) substrates by CVD method
The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining gr...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4761869/ https://www.ncbi.nlm.nih.gov/pubmed/26899732 http://dx.doi.org/10.1038/srep21773 |
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author | Pasternak, Iwona Wesolowski, Marek Jozwik, Iwona Lukosius, Mindaugas Lupina, Grzegorz Dabrowski, Pawel Baranowski, Jacek M. Strupinski, Wlodek |
author_facet | Pasternak, Iwona Wesolowski, Marek Jozwik, Iwona Lukosius, Mindaugas Lupina, Grzegorz Dabrowski, Pawel Baranowski, Jacek M. Strupinski, Wlodek |
author_sort | Pasternak, Iwona |
collection | PubMed |
description | The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide during the growth process makes manufacturing graphene on Si wafers extremely challenging. To overcome these difficulties and reach the set goals, we proposed growth of high quality graphene layers by the CVD method on Ge(100)/Si(100) wafers. In addition, a stochastic model was applied in order to describe the graphene growth process on the Ge(100)/Si(100) substrate and to determine the direction of further processes. As a result, high quality graphene was grown, which was proved by Raman spectroscopy results, showing uniform monolayer films with FWHM of the 2D band of 32 cm(−1). |
format | Online Article Text |
id | pubmed-4761869 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | Nature Publishing Group |
record_format | MEDLINE/PubMed |
spelling | pubmed-47618692016-02-29 Graphene growth on Ge(100)/Si(100) substrates by CVD method Pasternak, Iwona Wesolowski, Marek Jozwik, Iwona Lukosius, Mindaugas Lupina, Grzegorz Dabrowski, Pawel Baranowski, Jacek M. Strupinski, Wlodek Sci Rep Article The successful integration of graphene into microelectronic devices is strongly dependent on the availability of direct deposition processes, which can provide uniform, large area and high quality graphene on nonmetallic substrates. As of today the dominant technology is based on Si and obtaining graphene with Si is treated as the most advantageous solution. However, the formation of carbide during the growth process makes manufacturing graphene on Si wafers extremely challenging. To overcome these difficulties and reach the set goals, we proposed growth of high quality graphene layers by the CVD method on Ge(100)/Si(100) wafers. In addition, a stochastic model was applied in order to describe the graphene growth process on the Ge(100)/Si(100) substrate and to determine the direction of further processes. As a result, high quality graphene was grown, which was proved by Raman spectroscopy results, showing uniform monolayer films with FWHM of the 2D band of 32 cm(−1). Nature Publishing Group 2016-02-22 /pmc/articles/PMC4761869/ /pubmed/26899732 http://dx.doi.org/10.1038/srep21773 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ |
spellingShingle | Article Pasternak, Iwona Wesolowski, Marek Jozwik, Iwona Lukosius, Mindaugas Lupina, Grzegorz Dabrowski, Pawel Baranowski, Jacek M. Strupinski, Wlodek Graphene growth on Ge(100)/Si(100) substrates by CVD method |
title | Graphene growth on Ge(100)/Si(100) substrates by CVD method |
title_full | Graphene growth on Ge(100)/Si(100) substrates by CVD method |
title_fullStr | Graphene growth on Ge(100)/Si(100) substrates by CVD method |
title_full_unstemmed | Graphene growth on Ge(100)/Si(100) substrates by CVD method |
title_short | Graphene growth on Ge(100)/Si(100) substrates by CVD method |
title_sort | graphene growth on ge(100)/si(100) substrates by cvd method |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4761869/ https://www.ncbi.nlm.nih.gov/pubmed/26899732 http://dx.doi.org/10.1038/srep21773 |
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