X-ray nanodiffraction analysis of stress oscillations in a W thin film on through-silicon via

Synchrotron X-ray nanodiffraction is used to analyse residual stress distributions in a 200 nm-thick W film deposited on the scalloped inner wall of a through-silicon via. The diffraction data are evaluated using a novel dedicated methodology which allows the quantification of axial and tangential s...

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Detalles Bibliográficos
Autores principales: Todt, J., Hammer, H., Sartory, B., Burghammer, M., Kraft, J., Daniel, R., Keckes, J., Defregger, S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2016
Materias:
Research Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4762567/
https://www.ncbi.nlm.nih.gov/pubmed/26937239
http://dx.doi.org/10.1107/S1600576715023419

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4762567/
https://www.ncbi.nlm.nih.gov/pubmed/26937239
http://dx.doi.org/10.1107/S1600576715023419

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