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X-ray nanodiffraction analysis of stress oscillations in a W thin film on through-silicon via
Synchrotron X-ray nanodiffraction is used to analyse residual stress distributions in a 200 nm-thick W film deposited on the scalloped inner wall of a through-silicon via. The diffraction data are evaluated using a novel dedicated methodology which allows the quantification of axial and tangential s...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4762567/ https://www.ncbi.nlm.nih.gov/pubmed/26937239 http://dx.doi.org/10.1107/S1600576715023419 |