Activation of sputter-processed indium–gallium–zinc oxide films by simultaneous ultraviolet and thermal treatments

Indium–gallium–zinc oxide (IGZO) films, deposited by sputtering at room temperature, still require activation to achieve satisfactory semiconductor characteristics. Thermal treatment is typically carried out at temperatures above 300 °C. Here, we propose activating sputter- processed IGZO films usin...

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Detalles Bibliográficos
Autores principales: Tak, Young Jun, Du Ahn, Byung, Park, Sung Pyo, Kim, Si Joon, Song, Ae Ran, Chung, Kwun-Bum, Kim, Hyun Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4763207/
https://www.ncbi.nlm.nih.gov/pubmed/26902863
http://dx.doi.org/10.1038/srep21869

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4763207/
https://www.ncbi.nlm.nih.gov/pubmed/26902863
http://dx.doi.org/10.1038/srep21869

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