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III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation
As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III–V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III–V compounds are too easily accepted, ign...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group
2016
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4766467/ https://www.ncbi.nlm.nih.gov/pubmed/26911249 http://dx.doi.org/10.1038/srep22001 |