Bias-polarity-dependent resistance switching in W/SiO(2)/Pt and W/SiO(2)/Si/Pt structures

SiO(2) is the most significantly used insulator layer in semiconductor devices. Its functionality was recently extended to resistance switching random access memory, where the defective SiO(2) played an active role as the resistance switching (RS) layer. In this report, the bias-polarity-dependent R...

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Detalles Bibliográficos
Autores principales: Jiang, Hao, Li, Xiang Yuan, Chen, Ran, Shao, Xing Long, Yoon, Jung Ho, Hu, Xiwen, Hwang, Cheol Seong, Zhao, Jinshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4768181/
https://www.ncbi.nlm.nih.gov/pubmed/26916050
http://dx.doi.org/10.1038/srep22216

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4768181/
https://www.ncbi.nlm.nih.gov/pubmed/26916050
http://dx.doi.org/10.1038/srep22216

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