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Bias-polarity-dependent resistance switching in W/SiO(2)/Pt and W/SiO(2)/Si/Pt structures
SiO(2) is the most significantly used insulator layer in semiconductor devices. Its functionality was recently extended to resistance switching random access memory, where the defective SiO(2) played an active role as the resistance switching (RS) layer. In this report, the bias-polarity-dependent R...
Autores principales: | Jiang, Hao, Li, Xiang Yuan, Chen, Ran, Shao, Xing Long, Yoon, Jung Ho, Hu, Xiwen, Hwang, Cheol Seong, Zhao, Jinshi |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4768181/ https://www.ncbi.nlm.nih.gov/pubmed/26916050 http://dx.doi.org/10.1038/srep22216 |
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