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Few-layer HfS(2) transistors
HfS(2) is the novel transition metal dichalcogenide, which has not been experimentally investigated as the material for electron devices. As per the theoretical calculations, HfS(2) has the potential for well-balanced mobility (1,800 cm(2)/V·s) and bandgap (1.2 eV) and hence it can be a good candida...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4772098/ https://www.ncbi.nlm.nih.gov/pubmed/26926098 http://dx.doi.org/10.1038/srep22277 |