Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Graphene grown by high temperature molecular beam epitaxy on hexagonal boron nitride (hBN) forms continuous domains with dimensions of order 20 μm, and exhibits moiré patterns with large periodicities, up to ~30 nm, indicating that the layers are highly strained. Topological defects in the moiré pat...

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Detalles Bibliográficos
Autores principales: Summerfield, Alex, Davies, Andrew, Cheng, Tin S., Korolkov, Vladimir V., Cho, YongJin, Mellor, Christopher J., Foxon, C. Thomas, Khlobystov, Andrei N., Watanabe, Kenji, Taniguchi, Takashi, Eaves, Laurence, Novikov, Sergei V., Beton, Peter H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4772548/
https://www.ncbi.nlm.nih.gov/pubmed/26928710
http://dx.doi.org/10.1038/srep22440

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4772548/
https://www.ncbi.nlm.nih.gov/pubmed/26928710
http://dx.doi.org/10.1038/srep22440

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