Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm(0.1)Bi(0.9)FeO(3) layer as the tunnelling barrier and a semico...

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Detalles Bibliográficos
Autores principales: Jin Hu, Wei, Wang, Zhihong, Yu, Weili, Wu, Tom
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4773477/
https://www.ncbi.nlm.nih.gov/pubmed/26924259
http://dx.doi.org/10.1038/ncomms10808

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4773477/
https://www.ncbi.nlm.nih.gov/pubmed/26924259
http://dx.doi.org/10.1038/ncomms10808

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