Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers

The integration of dislocation-free Ge nano-islands was realized via selective molecular beam epitaxy on Si nano-tip patterned substrates. The Si-tip wafers feature a rectangular array of nanometer sized Si tips with (001) facet exposed among a SiO(2) matrix. These wafers were fabricated by compleme...

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Detalles Bibliográficos
Autores principales: Niu, Gang, Capellini, Giovanni, Schubert, Markus Andreas, Niermann, Tore, Zaumseil, Peter, Katzer, Jens, Krause, Hans-Michael, Skibitzki, Oliver, Lehmann, Michael, Xie, Ya-Hong, von Känel, Hans, Schroeder, Thomas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4778127/
https://www.ncbi.nlm.nih.gov/pubmed/26940260
http://dx.doi.org/10.1038/srep22709

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4778127/
https://www.ncbi.nlm.nih.gov/pubmed/26940260
http://dx.doi.org/10.1038/srep22709

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