Phosphorus Doping in Si Nanocrystals/SiO(2) msultilayers and Light Emission with Wavelength compatible for Optical Telecommunication

Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO(2) multilayers are fabricated. As revealed by XPS and ESR measurements, P do...

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Detalles Bibliográficos
Autores principales: Lu, Peng, Mu, Weiwei, Xu, Jun, Zhang, Xiaowei, Zhang, Wenping, Li, Wei, Xu, Ling, Chen, Kunji
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4783703/
https://www.ncbi.nlm.nih.gov/pubmed/26956425
http://dx.doi.org/10.1038/srep22888

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4783703/
https://www.ncbi.nlm.nih.gov/pubmed/26956425
http://dx.doi.org/10.1038/srep22888

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