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Phosphorus Doping in Si Nanocrystals/SiO(2) msultilayers and Light Emission with Wavelength compatible for Optical Telecommunication

Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO(2) multilayers are fabricated. As revealed by XPS and ESR measurements, P do...

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Detalles Bibliográficos
Autores principales:	Lu, Peng, Mu, Weiwei, Xu, Jun, Zhang, Xiaowei, Zhang, Wenping, Li, Wei, Xu, Ling, Chen, Kunji
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4783703/ https://www.ncbi.nlm.nih.gov/pubmed/26956425 http://dx.doi.org/10.1038/srep22888

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