Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on o...

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Detalles Bibliográficos
Autores principales: Averyanov, Dmitry V., Karateeva, Christina G., Karateev, Igor A., Tokmachev, Andrey M., Vasiliev, Alexander L., Zolotarev, Sergey I., Likhachev, Igor A., Storchak, Vyacheslav G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4783778/
https://www.ncbi.nlm.nih.gov/pubmed/26957146
http://dx.doi.org/10.1038/srep22841

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4783778/
https://www.ncbi.nlm.nih.gov/pubmed/26957146
http://dx.doi.org/10.1038/srep22841

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