Correlation of p-doping in CVD Graphene with Substrate Surface Charges

Correlations between the level of p-doping exhibited in large area chemical vapour deposition (CVD) graphene field effect transistor structures (gFETs) and residual charges created by a variety of surface treatments to the silicon dioxide (SiO(2)) substrates prior to CVD graphene transfer are measur...

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Detalles Bibliográficos
Autores principales: Goniszewski, S., Adabi, M., Shaforost, O., Hanham, S. M., Hao, L., Klein, N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4783783/
https://www.ncbi.nlm.nih.gov/pubmed/26956096
http://dx.doi.org/10.1038/srep22858

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4783783/
https://www.ncbi.nlm.nih.gov/pubmed/26956096
http://dx.doi.org/10.1038/srep22858

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