Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters

The optical gain and spontaneous emission characteristics of low In-content AlInN-delta-GaN quantum wells (QWs) are analyzed for deep ultraviolet (UV) light emitting diodes (LEDs) and lasers. Our analysis shows a large increase in the dominant transverse electric (TE) polarized spontaneous emission...

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Detalles Bibliográficos
Autores principales: Tan, Chee-Keong, Sun, Wei, Borovac, Damir, Tansu, Nelson
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4785363/
https://www.ncbi.nlm.nih.gov/pubmed/26961170
http://dx.doi.org/10.1038/srep22983

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4785363/
https://www.ncbi.nlm.nih.gov/pubmed/26961170
http://dx.doi.org/10.1038/srep22983

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