Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. I...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhao, Sheng-Xun, Liu, Xiao-Yong, Zhang, Lin-Qing, Huang, Hong-Fan, Shi, Jin-Shan, Wang, Peng-Fei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4786511/
https://www.ncbi.nlm.nih.gov/pubmed/26964559
http://dx.doi.org/10.1186/s11671-016-1335-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4786511/
https://www.ncbi.nlm.nih.gov/pubmed/26964559
http://dx.doi.org/10.1186/s11671-016-1335-7

Ejemplares similares