High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N(2)) and oxygen (O(2)) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the rang...

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Detalles Bibliográficos
Autores principales: Kim, Won-Gi, Tak, Young Jun, Du Ahn, Byung, Jung, Tae Soo, Chung, Kwun-Bum, Kim, Hyun Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4789782/
https://www.ncbi.nlm.nih.gov/pubmed/26972476
http://dx.doi.org/10.1038/srep23039

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4789782/
https://www.ncbi.nlm.nih.gov/pubmed/26972476
http://dx.doi.org/10.1038/srep23039

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