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High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C

We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N(2)) and oxygen (O(2)) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the rang...

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Autores principales: Kim, Won-Gi, Tak, Young Jun, Du Ahn, Byung, Jung, Tae Soo, Chung, Kwun-Bum, Kim, Hyun Jae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4789782/
https://www.ncbi.nlm.nih.gov/pubmed/26972476
http://dx.doi.org/10.1038/srep23039
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author Kim, Won-Gi
Tak, Young Jun
Du Ahn, Byung
Jung, Tae Soo
Chung, Kwun-Bum
Kim, Hyun Jae
author_facet Kim, Won-Gi
Tak, Young Jun
Du Ahn, Byung
Jung, Tae Soo
Chung, Kwun-Bum
Kim, Hyun Jae
author_sort Kim, Won-Gi
collection PubMed
description We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N(2)) and oxygen (O(2)) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O(2) at 2 MPa were superior to those annealed in N(2) at 4 MPa, despite the lower pressure. For O(2) HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites.
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spelling pubmed-47897822016-03-16 High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C Kim, Won-Gi Tak, Young Jun Du Ahn, Byung Jung, Tae Soo Chung, Kwun-Bum Kim, Hyun Jae Sci Rep Article We investigated the use of high-pressure gases as an activation energy source for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). High-pressure annealing (HPA) in nitrogen (N(2)) and oxygen (O(2)) gases was applied to activate a-IGZO TFTs at 100 °C at pressures in the range from 0.5 to 4 MPa. Activation of the a-IGZO TFTs during HPA is attributed to the effect of the high-pressure environment, so that the activation energy is supplied from the kinetic energy of the gas molecules. We reduced the activation temperature from 300 °C to 100 °C via the use of HPA. The electrical characteristics of a-IGZO TFTs annealed in O(2) at 2 MPa were superior to those annealed in N(2) at 4 MPa, despite the lower pressure. For O(2) HPA under 2 MPa at 100 °C, the field effect mobility and the threshold voltage shift under positive bias stress were improved by 9.00 to 10.58 cm(2)/V.s and 3.89 to 2.64 V, respectively. This is attributed to not only the effects of the pressurizing effect but also the metal-oxide construction effect which assists to facilitate the formation of channel layer and reduces oxygen vacancies, served as electron trap sites. Nature Publishing Group 2016-03-14 /pmc/articles/PMC4789782/ /pubmed/26972476 http://dx.doi.org/10.1038/srep23039 Text en Copyright © 2016, Macmillan Publishers Limited http://creativecommons.org/licenses/by/4.0/ This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Kim, Won-Gi
Tak, Young Jun
Du Ahn, Byung
Jung, Tae Soo
Chung, Kwun-Bum
Kim, Hyun Jae
High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
title High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
title_full High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
title_fullStr High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
title_full_unstemmed High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
title_short High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C
title_sort high-pressure gas activation for amorphous indium-gallium-zinc-oxide thin-film transistors at 100 °c
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4789782/
https://www.ncbi.nlm.nih.gov/pubmed/26972476
http://dx.doi.org/10.1038/srep23039
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