The isotype ZnO/SiC heterojunction prepared by molecular beam epitaxy – A chemical inert interface with significant band discontinuities

ZnO/SiC heterojunctions show great potential for various optoelectronic applications (e.g., ultraviolet light emitting diodes, photodetectors, and solar cells). However, the lack of a detailed understanding of the ZnO/SiC interface prevents an efficient and rapid optimization of these devices. Here,...

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Detalles Bibliográficos
Autores principales: Zhang, Yufeng, Lin, Nanying, Li, Yaping, Wang, Xiaodan, Wang, Huiqiong, Kang, Junyong, Wilks, Regan, Bär, Marcus, Mu, Rui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4791549/
https://www.ncbi.nlm.nih.gov/pubmed/26976240
http://dx.doi.org/10.1038/srep23106

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4791549/
https://www.ncbi.nlm.nih.gov/pubmed/26976240
http://dx.doi.org/10.1038/srep23106

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