Crossbar Nanoscale HfO(2)-Based Electronic Synapses

Crossbar resistive switching devices down to 40 × 40 nm(2) in size comprising 3-nm-thick HfO(2) layers are forming-free and exhibit up to 10(5) switching cycles. Four-nanometer-thick devices display the ability of gradual switching in both directions, thus emulating long-term potentiation/depression...

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Detalles Bibliográficos
Autores principales: Matveyev, Yury, Kirtaev, Roman, Fetisova, Alena, Zakharchenko, Sergey, Negrov, Dmitry, Zenkevich, Andrey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2016
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4792835/
https://www.ncbi.nlm.nih.gov/pubmed/26979725
http://dx.doi.org/10.1186/s11671-016-1360-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4792835/
https://www.ncbi.nlm.nih.gov/pubmed/26979725
http://dx.doi.org/10.1186/s11671-016-1360-6

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