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Crossbar Nanoscale HfO(2)-Based Electronic Synapses
Crossbar resistive switching devices down to 40 × 40 nm(2) in size comprising 3-nm-thick HfO(2) layers are forming-free and exhibit up to 10(5) switching cycles. Four-nanometer-thick devices display the ability of gradual switching in both directions, thus emulating long-term potentiation/depression...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4792835/ https://www.ncbi.nlm.nih.gov/pubmed/26979725 http://dx.doi.org/10.1186/s11671-016-1360-6 |