Mobility overestimation due to gated contacts in organic field-effect transistors

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. Howe...

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Detalles Bibliográficos
Autores principales: Bittle, Emily G., Basham, James I., Jackson, Thomas N., Jurchescu, Oana D., Gundlach, David J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4792947/
https://www.ncbi.nlm.nih.gov/pubmed/26961271
http://dx.doi.org/10.1038/ncomms10908

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4792947/
https://www.ncbi.nlm.nih.gov/pubmed/26961271
http://dx.doi.org/10.1038/ncomms10908

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