Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-ga...

Descripción completa

Detalles Bibliográficos
Autores principales: Sun, Yi-Lin, Xie, Dan, Xu, Jian-Long, Zhang, Cheng, Dai, Rui-Xuan, Li, Xian, Meng, Xiang-Jian, Zhu, Hong-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4793293/
https://www.ncbi.nlm.nih.gov/pubmed/26980284
http://dx.doi.org/10.1038/srep23090

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4793293/
https://www.ncbi.nlm.nih.gov/pubmed/26980284
http://dx.doi.org/10.1038/srep23090

Ejemplares similares