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Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-ga...

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Detalles Bibliográficos
Autores principales:	Sun, Yi-Lin, Xie, Dan, Xu, Jian-Long, Zhang, Cheng, Dai, Rui-Xuan, Li, Xian, Meng, Xiang-Jian, Zhu, Hong-Wei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group 2016
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4793293/ https://www.ncbi.nlm.nih.gov/pubmed/26980284 http://dx.doi.org/10.1038/srep23090

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