Photo-induced Doping in GaN Epilayers with Graphene Quantum Dots

We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL...

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Detalles Bibliográficos
Autores principales: Lin, T. N., Inciong, M. R., Santiago, S. R. M. S., Yeh, T. W., Yang, W. Y., Yuan, C. T., Shen, J. L., Kuo, H. C., Chiu, C. H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4796870/
https://www.ncbi.nlm.nih.gov/pubmed/26987403
http://dx.doi.org/10.1038/srep23260

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4796870/
https://www.ncbi.nlm.nih.gov/pubmed/26987403
http://dx.doi.org/10.1038/srep23260

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