Selector-free resistive switching memory cell based on BiFeO(3) nano-island showing high resistance ratio and nonlinearity factor

Highly nonlinear bistable current-voltage (I–V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices that are compatible with cross-point stack structures. Up to now, such I–V characteristics have been achieved by introducing complex device st...

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Detalles Bibliográficos
Autores principales: Jeon, Ji Hoon, Joo, Ho-Young, Kim, Young-Min, Lee, Duk Hyun, Kim, Jin-Soo, Kim, Yeon Soo, Choi, Taekjib, Park, Bae Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4802337/
https://www.ncbi.nlm.nih.gov/pubmed/27001415
http://dx.doi.org/10.1038/srep23299

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4802337/
https://www.ncbi.nlm.nih.gov/pubmed/27001415
http://dx.doi.org/10.1038/srep23299

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