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Selector-free resistive switching memory cell based on BiFeO(3) nano-island showing high resistance ratio and nonlinearity factor
Highly nonlinear bistable current-voltage (I–V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices that are compatible with cross-point stack structures. Up to now, such I–V characteristics have been achieved by introducing complex device st...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4802337/ https://www.ncbi.nlm.nih.gov/pubmed/27001415 http://dx.doi.org/10.1038/srep23299 |