Integrating Epitaxial-Like Pb(Zr,Ti)O(3) Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed i...

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Detalles Bibliográficos
Autores principales: Park, Jae Hyo, Kim, Hyung Yoon, Jang, Gil Su, Seok, Ki Hwan, Chae, Hee Jae, Lee, Sol Kyu, Kiaee, Zohreh, Joo, Seung Ki
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4804328/
https://www.ncbi.nlm.nih.gov/pubmed/27005886
http://dx.doi.org/10.1038/srep23189

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4804328/
https://www.ncbi.nlm.nih.gov/pubmed/27005886
http://dx.doi.org/10.1038/srep23189

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