P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

The concept of p-channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization effect is demonstrated. The existence of 2DHG near the lower interface of InGaN/GaN heterostructure is verified by theoretical simulation and capacitance-v...

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Detalles Bibliográficos
Autores principales: Zhang, Kexiong, Sumiya, Masatomo, Liao, Meiyong, Koide, Yasuo, Sang, Liwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4810372/
https://www.ncbi.nlm.nih.gov/pubmed/27021054
http://dx.doi.org/10.1038/srep23683

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4810372/
https://www.ncbi.nlm.nih.gov/pubmed/27021054
http://dx.doi.org/10.1038/srep23683

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