Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice-matched to GaN and report the growth of GaN on a r...

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Detalles Bibliográficos
Autores principales: Gupta, Priti, Rahman, A. A., Subramanian, Shruti, Gupta, Shalini, Thamizhavel, Arumugam, Orlova, Tatyana, Rouvimov, Sergei, Vishwanath, Suresh, Protasenko, Vladimir, Laskar, Masihhur R., Xing, Huili Grace, Jena, Debdeep, Bhattacharya, Arnab
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4812325/
https://www.ncbi.nlm.nih.gov/pubmed/27025461
http://dx.doi.org/10.1038/srep23708

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4812325/
https://www.ncbi.nlm.nih.gov/pubmed/27025461
http://dx.doi.org/10.1038/srep23708

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