Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols

Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of x-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grati...

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Autores principales: Znati, Sami A., Chedid, Nicholas, Miao, Houxun, Chen, Lei, Bennett, Eric E., Wen, Han
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4812826/
https://www.ncbi.nlm.nih.gov/pubmed/27042384
http://dx.doi.org/10.4236/jsemat.2015.54022
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author Znati, Sami A.
Chedid, Nicholas
Miao, Houxun
Chen, Lei
Bennett, Eric E.
Wen, Han
author_facet Znati, Sami A.
Chedid, Nicholas
Miao, Houxun
Chen, Lei
Bennett, Eric E.
Wen, Han
author_sort Znati, Sami A.
collection PubMed
description Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of x-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures.
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spelling pubmed-48128262016-03-30 Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols Znati, Sami A. Chedid, Nicholas Miao, Houxun Chen, Lei Bennett, Eric E. Wen, Han J Surf Eng Mater Adv Technol Article Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of x-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures. 2015-10-16 2015-10 /pmc/articles/PMC4812826/ /pubmed/27042384 http://dx.doi.org/10.4236/jsemat.2015.54022 Text en This work is licensed under the Creative Commons Attribution International License (CC BY). http://creativecommons.org/licenses/by/4.0/
spellingShingle Article
Znati, Sami A.
Chedid, Nicholas
Miao, Houxun
Chen, Lei
Bennett, Eric E.
Wen, Han
Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols
title Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols
title_full Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols
title_fullStr Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols
title_full_unstemmed Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols
title_short Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols
title_sort electrodeposition of gold to conformally fill high aspect ratio nanometric silicon grating trenches: a comparison of pulsed and direct current protocols
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4812826/
https://www.ncbi.nlm.nih.gov/pubmed/27042384
http://dx.doi.org/10.4236/jsemat.2015.54022
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