Investigation of the Performance of HEMT-Based NO, NO(2) and NH(3) Exhaust Gas Sensors for Automotive Antipollution Systems

We report improved sensitivity to NO, NO [Formula: see text] and NH [Formula: see text] gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized us...

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Detalles Bibliográficos
Autores principales: Halfaya, Yacine, Bishop, Chris, Soltani, Ali, Sundaram, Suresh, Aubry, Vincent, Voss, Paul L., Salvestrini, Jean-Paul, Ougazzaden, Abdallah
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4813848/
https://www.ncbi.nlm.nih.gov/pubmed/26907298
http://dx.doi.org/10.3390/s16030273

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4813848/
https://www.ncbi.nlm.nih.gov/pubmed/26907298
http://dx.doi.org/10.3390/s16030273

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