Phase transitions via selective elemental vacancy engineering in complex oxide thin films

Defect engineering has brought about a unique level of control for Si-based semiconductors, leading to the optimization of various opto-electronic properties and devices. With regard to perovskite transition metal oxides, O vacancies have been a key ingredient in defect engineering, as they play a c...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Sang A., Jeong, Hoidong, Woo, Sungmin, Hwang, Jae-Yeol, Choi, Si-Young, Kim, Sung-Dae, Choi, Minseok, Roh, Seulki, Yu, Hosung, Hwang, Jungseek, Kim, Sung Wng, Choi, Woo Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4817049/
https://www.ncbi.nlm.nih.gov/pubmed/27033718
http://dx.doi.org/10.1038/srep23649

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4817049/
https://www.ncbi.nlm.nih.gov/pubmed/27033718
http://dx.doi.org/10.1038/srep23649

Ejemplares similares