A partly-contacted epitaxial lateral overgrowth method applied to GaN material

We have discussed a new crystal epitaxial lateral overgrowth (ELO) method, partly-contacted ELO (PC-ELO) method, of which the overgrowth layer partly-contacts with underlying seed layer. The passage also illustrates special mask structures with and without lithography and provides three essential co...

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Detalles Bibliográficos
Autores principales: Xiao, Ming, Zhang, Jincheng, Duan, Xiaoling, Shan, Hengsheng, Yu, Ting, Ning, Jing, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4817117/
https://www.ncbi.nlm.nih.gov/pubmed/27033154
http://dx.doi.org/10.1038/srep23842

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4817117/
https://www.ncbi.nlm.nih.gov/pubmed/27033154
http://dx.doi.org/10.1038/srep23842

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