Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

[Image: see text] Non- and semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we...

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Detalles Bibliográficos
Autores principales: Zhu, Tongtong, Ding, Tao, Tang, Fengzai, Han, Yisong, Ali, Muhammad, Badcock, Tom, Kappers, Menno J., Shields, Andrew J., Smoukov, Stoyan K., Oliver, Rachel A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2015
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4819532/
https://www.ncbi.nlm.nih.gov/pubmed/27065755
http://dx.doi.org/10.1021/acs.cgd.5b01560

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4819532/
https://www.ncbi.nlm.nih.gov/pubmed/27065755
http://dx.doi.org/10.1021/acs.cgd.5b01560

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